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采用溶胶-凝胶方法在载玻片衬底上制备了本征及不同Al3+掺杂浓度的ZnO:Al薄膜,利用X射线衍射(XRD)、原子力显微镜,紫外-可见光吸收光谱及霍尔效应研究了Al3+掺杂浓度对ZnO:Al薄膜结构和光电性能的影响。结果显示,ZnO:Al薄膜为六角纤锌矿晶体结构,具有很高的沿c轴的(002)择优取向,Al3+掺杂并没有改变ZnO的晶体结构,只是Al取代了Zn;掺杂前后薄膜样品均在ZnO带边吸收的位置有较强的吸收而在可见光范围吸收较小;并且当Al3+掺杂浓度为1.5%(摩尔百分比)时所获得的ZnO:Al薄膜具有最小的电阻率,为26Ωcm。
The ZnO thin films with different Al3 + doping concentrations were prepared by sol-gel method on glass slides. The X-ray diffraction (XRD), atomic force microscopy, UV-Vis absorption spectra and Hall effect Effects of Al3 + Doping Concentration on the Structure and Optical and Electrical Properties of ZnO: Al Films. The results show that the ZnO: Al thin film has a hexagonal wurtzite structure with a (002) preferred orientation along the c-axis. Al3 + doping does not change the crystal structure of ZnO, except that Al replaces Zn. The samples all have strong absorption at the absorption band edge of ZnO and little absorption in the visible range. The ZnO: Al films obtained with the Al3 + doping concentration of 1.5% (mol%) have the lowest resistivity 26Ωcm.