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近年来,Ⅱ类超晶格探测器在国际上发展极为迅速,已经实现了高性能的中波和长波超晶格焦平面探测器并进行了成像试验。简要介绍了新型InAs/GaSb Ⅱ类超晶格红外探测技术的基本原理、材料生长、器件制备及其发展历史与方向。InAs/GaSb Ⅱ类超晶格是由Sakaki和Esaki于1977年提出的。此后,由于它在红外成像探测技术上极大的应用价值和前景,对这一低维半导体结构的研究持续不衰。改变超晶格的周期,它的吸收截止波长可覆盖3~30μm的宽广范围。基于现代的材料生长技术和分子束外延,可以在单原子层的精度控制材料生长,因此,截止波长由周期决定这一特性使得Ⅱ类超晶格探测器在实现红外焦平面均匀性方面独具优势。ⅡI-V族化合物材料与器件工艺的成熟性使得InAs/GaSb正成为一种很有竞争力的红外探测新技术。
In recent years, Class II superlattice detectors have developed rapidly in the world. High-performance medium-wave and long-wave superlattice focal plane detectors have been realized and imaging experiments have been carried out. The basic principle of new InAs / GaSb Ⅱ superlattice infrared detection technology, material growth, device preparation and its development history and direction are briefly introduced. InAs / GaSb type II superlattices were proposed by Sakaki and Esaki in 1977. Since then, due to its great application value and prospect in infrared imaging detection technology, the research on this low-dimensional semiconductor structure continues unabated. Change the period of the superlattice, its absorption cutoff wavelength can cover a wide range of 3 ~ 30μm. Based on modern material growth techniques and molecular beam epitaxy, material growth can be controlled at the accuracy of the monatomic layer. Therefore, the characteristic of the cutoff wavelength determined by the period makes the Class II superlattice detector unique in achieving the uniformity of the infrared focal plane Advantage. The maturity of the II-V family of compound materials and devices has made InAs / GaSb a very competitive new technology for infrared detection.