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在355～455℃的密封安瓿中,对利用Zn和Sb元素在n-型InSb中扩散Zn进行了系统的研究。把数据整理成扩散源中Sb与Zn的克分子比N_(Sb)/N_(Zn)的函数,就能清楚地了解扩散特性。如果Zn源足够,当N_(Sb)/N_(Zn)≤0.5或N_(Sb)/N_(Zn)≥5时,扩散深度是一个常数,而与装入安瓿的Zn或/和Sb源的总量无关。当N_(Sb)/N_(Zn)≥5,可以重复地获得高度平整的扩散前沿及高质量的p-型层。但是,当N_(Sb)/N_(Zn)≤0.5时,就只能得到一个很粗糙的扩散前沿和有许多损伤的p-型层。用上述结果,制备了3～5μm的InSb8元光伏探测器列阵。
In a sealed ampoule at 355-455 ° C, systematic studies were conducted on the diffusion of Zn into n-type InSb using Zn and Sb elements. Sorting the data as a function of the molar ratio of Sb to Zn in the diffusion source, N Sb / N Zn, gives a clear idea of the diffusion properties. If the Zn source is sufficient, the diffusion depth is a constant for N Sb / N Zn ≤ 0.5 or N Sb / N Zn ≥ 5, Total has nothing to do. When N_ (Sb) / N_ (Zn) ≥5, highly flat diffusion front and high quality p-type layer can be obtained repeatedly. However, when N Sb / N Zn ≤ 0.5, only a very rough diffusion front and p-type layer with many damage can be obtained. With the above results, 3 ~ 5μm InSb8 photovoltaic detector array was prepared.