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采用电子回旋共振-等离子体辅助增强金属有机物化学气相沉积两步生长法在玻璃衬底上低温沉积GaN薄膜。利用原位反射高能电子衍射、X射线衍射、室温透射光谱和原子力显微镜,研究了不同TMGa流量条件下沉积的GaN薄膜的结晶性、光学性质和表面形貌。结果表明,TMGa流量对GaN薄膜质量影响很大,TMGa流量约为1.4cm3/min(标准状态)条件下沉积的GaN薄膜结晶性较好,呈高度c-轴择优取向,420～1110nm波长光区内透过率超过90%,薄膜表面由大小均匀的亚微米量级表面岛按一致取向堆砌而成。
The GaN thin film was deposited on the glass substrate by electron cyclotron resonance - plasma assisted enhanced metal - organic chemical vapor deposition two - step growth method. The in-situ reflection high-energy electron diffraction, X-ray diffraction, room-temperature transmission spectroscopy and atomic force microscopy were used to study the crystallinity, optical properties and surface morphology of GaN films deposited under different TMGa flow rates. The results show that TMGa flow has a great influence on the quality of GaN thin films. The TMGaGaN films deposited at about 1.4cm3 / min (standard state) have good crystallinity and high c-axis preferred orientation. The wavelength of 420 ~ 1110nm Within the transmission rate of more than 90%, the surface of the membrane by the uniform size of sub-micron surface island according to a consistent orientation piled.