论文部分内容阅读
采用单片微波集成电路(MMIC)芯片技术和多芯片组件(MCM)微组装工艺,设计了一款小尺寸双通道发射接收(T/R)组件。组件由环形器、限幅器芯片、低噪声放大器(LNA)芯片、幅相控制多功能芯片、驱动放大器芯片和功率放大器芯片(PA)等部分构成。基于Ga As的LNA MMIC芯片具有更低噪声系数,基于Ga N的PA MMIC芯片具有更高的输出功率及功率附加效率。组件接收通道采用基于Ga As的LNA芯片,发射通道采用基于Ga N的PA芯片,设计了针对发射通道驱动放大器与功率放大器的协同脉冲调制电路。研制的T/R组件在8~12 GHz的频带内:接收通道在工作电压+5 V连续波的条件下,小信号增益大于20 d B,噪声小于3 d B;发射通道在周期1 ms,脉宽10%的调制脉冲条件下,脉冲发射功率大于46 d Bm。T/R组件外形尺寸为70 mm×46 mm×15 mm。
Using a monolithic microwave integrated circuit (MMIC) chip technology and a multi-chip module (MCM) micro-assembly process, a small size dual channel transmit / receive (T / R) module is designed. Components from the circulator, limiter chip, low noise amplifier (LNA) chip, amplitude control multifunction chip, driver amplifier chip and power amplifier chip (PA) and other components. GaAs-based LNA MMIC chips have lower noise figure, Ga N-based PA MMIC chips with higher output power and power added efficiency. The GaAs-based LNA chip is used as the receive channel of the device, and the GaN-based PA chip is used as the transmit channel. A co-pulsed modulation circuit is designed for the drive channel amplifier and the power amplifier. The developed T / R module is in the frequency band from 8 to 12 GHz: the gain of small signal is more than 20 d B and the noise is less than 3 d B under the operating voltage of +5 V continuous wave on the receiving channel. The transmitting channel is at 1 ms, Under the condition of modulating pulse whose pulse width is 10%, the pulse transmitting power is greater than 46 d Bm. The dimensions of the T / R components are 70 mm × 46 mm × 15 mm.