本文介绍用直流磁控S枪在H_2/Ar混合气体中反应溅射单晶硅靶淀积a-Si:H光电导薄膜的制备工艺。研究了用这种技术制备的a-Si:H薄膜的光学特性(透射率光谱、光学常数和光学带隙等)、晶相结构(用电子衍射图谱)、红外吸收光谱和光电导性能。并讨论了制备工艺条件与薄膜微结构和性能的关系。 This article describes the preparation of a-Si: H photoconductive thin film deposited by reactive magnetron sputtering on a single-crystal Si target in a H 2 / Ar mixed gas using a DC magnetron S gun. The optical properties (transmittance, optical and optical bandgap), aphase structure (by electron diffraction), infrared absorption spectra and photoconductivity of a-Si: H thin films prepared by this technique were investigated. The relationship between the preparation conditions and the microstructure and properties of the films was also discussed.