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利用计算机辅助设计技术数值仿真工具,研究22 nm工艺技术节点下超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应,系统地分析了掺杂地平面技术、重离子入射位置、栅功函数和衬底偏置电压对于单粒子瞬态效应的影响.模拟结果表明,掺杂地平面和量子效应对于单粒子瞬态效应影响很小,重离子入射产生大量电荷,屏蔽了初始电荷分布的差异性.单粒子瞬态效应以及收集电荷和重离子入射位置强相关,超薄体全耗尽绝缘体上硅最敏感的区域靠近漏端.当栅功函数从4.3 eV变化到4.65 eV时,单粒子瞬态电流峰值从564μA减小到509μA,收集电荷从4.57 fC减小到3.97 fC.超薄体全耗尽绝缘体上硅器件单粒子瞬态电流峰值被衬底偏置电压强烈调制,但是收集电荷却与衬底偏置电压弱相关.
Using the computer aided design technique numerical simulation tool, the transient effect of ultrathin body depleted silicon-on-insulator (SOI) single-crystal transistor under 22 nm process technology node was studied. The effects of doping ground plane technique, heavy ion incident position, gate work function and liner And the effect of bottom bias voltage on the transient effects of single particles.The simulation results show that the doping ground plane and quantum effects have little effect on the transient effects of single particles and produce a large amount of charge at the entrance of heavy ions and shield the difference of the initial charge distribution. The single-particle transient effect and the strong correlation between the collected charge and the entrance of heavy ions, the most sensitive region of the ultra-thin, fully depleted silicon on insulator, is close to the drain terminal. The single-particle transient current peak at a gate power of 4.3 eV to 4.65 eV Decreasing from 564μA to 509μA and decreasing the charge collected from 4.57 fC to 3.97 fC Ultrasonically Bulk Silicon-on-Silicon Devices The single-particle transient current peaks are strongly modulated by the substrate bias voltage but the charge collected is offset from the substrate Voltage weakly related.