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采用三维数值仿真的方法分别研究SiC MOSFET条形原胞、方形原胞以及六角原胞的电学特性与栅氧化层电场分布;提出SiC MOSFET方形原胞新并联方案,相比传统的方形原胞阵列,新方案可有效降低器件栅氧电场峰值,达到与六角原胞接近的效果。新方案在版图实现上并未增加技术难度,是SiC MOSFET版图设计中一种可行的方案。
The three-dimensional numerical simulation methods were used to study the electrical properties of the stripe cells, the square cells and the hexagonal cells of the SiC MOSFET. The electric field distribution of the gate oxide layer was proposed. A novel parallel connection scheme of the square cells was proposed. Compared with the traditional square cell array, The new scheme can effectively reduce the device gate oxygen field peak, reaching the effect of hexagonal cells close. The new scheme does not increase the technical difficulty in the layout implementation and is a feasible solution in the design of SiC MOSFET layout.