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本文通过对含有高In组分量子点的双波长LED进行了模拟计算,并对器件的能带结构、载流子浓度、复合速率和辐射光谱进行了研究.通过对器件结构的调整与对比,发现蓝绿双波长LED的绿光量子阱中加入高In组分量子点后可以拓宽辐射光谱,使LED光谱具有更高的显色指数,为实现无荧光粉的白光LED提供指导.量子点对载流子具有很强的束缚能力,并且载流子在量子点处具有更短的寿命,载流子优先在量子点处复合,量子点处所对应的黄光与量子阱润湿层所对应的绿光的比例随量子点浓度的增大而增大,载流子浓度较低时以量子点处的黄光辐射为主,载流子浓度变大后,量子点复合逐渐达到饱和,绿光辐射开始占据主导.对间隔层厚度和间隔层掺杂浓度的调节可以很方便地调控载流子的分布,从而实现对含有量子点的双波长LED两个活性层辐射速率的调控.结果表明,通过对量子点浓度、间隔层厚度、间隔层掺杂浓度的控节可以很好地实现对LED辐射光谱的调控作用.
In this paper, we simulate the dual-wavelength LED containing high In quantum dots and study the energy band structure, carrier concentration, recombination rate and radiation spectrum of the device.After adjusting and comparing the device structure, It is found that the addition of the high In component quantum dots to the blue and green dual-wavelength LED green quantum wells can broaden the radiation spectrum and make the LED spectrum have a higher color rendering index to provide guidance for realizing the phosphor-free white LED. And the carrier has a shorter lifetime at the quantum dot. The carrier preferentially recombines at the quantum dot, the yellow corresponding to the quantum dot and the green corresponding to the quantum well wetting layer The proportion of light increases with the increase of the quantum dot concentration. When the carrier concentration is low, the yellow radiation at the quantum dots is dominant. After the carrier concentration becomes larger, the quantum dot recombination gradually reaches saturation, and the green radiation Began to dominate.The adjustment of the spacer layer thickness and spacer doping concentration can easily regulate the carrier distribution in order to achieve the quantum dot dual wavelength LED two active layer radiation rate regulation.The results show that by The amount of Point concentration, the thickness of the spacer layer, the spacer layer is doped concentration control section can realize the regulation of the LED radiation spectrum.