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利用氢离子束辅助磁控溅射制备氢化非晶硅薄膜(a-Si∶H),借助拉曼光谱仪、红外光谱仪和椭圆偏振光谱仪等分析测试手段,研究衬底温度对a-Si∶H薄膜结构特性影响规律。结果表明在合适的衬底温度下氢离子束辅助磁控溅射制备的a-Si∶H薄膜具有较好短程有序度和中程有序度;当衬底温度为200℃时,薄膜的结构特性最优,a-Si∶H薄膜的次带吸收系数为0.46 cm~(-1)、氢含量为10.36%(原子比)、微结构因子为0.68和光学带隙为1.94 e V。
Hydrogenated amorphous silicon thin films (a-Si: H) were prepared by the aid of hydrogen ion beam assisted magnetron sputtering. The effects of substrate temperature on a-Si: H thin films were investigated by Raman spectroscopy, infrared spectroscopy and ellipsometry. Structural characteristics affect the law. The results show that a-Si:H thin films prepared by hydrogen ion beam assisted magnetron sputtering have good short-range order and medium-order degree at the proper substrate temperature. When the substrate temperature is 200 ℃, The structural properties of a-Si: H thin film are 0.46 cm -1, the hydrogen content is 10.36% (atomic ratio), the microstructure factor is 0.68 and the optical band gap is 1.94 eV.