台积电和ARM将联手研发10nm制造工艺

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台积电、ARM于近日联合宣布,双方已经签订了新的多年合作协议,将共同致力于10 nm FinFET制造工艺的研发,并为ARMv8-A系列处理器进行优化。双方表示,20 nm SoC、16 nm FinFET工艺节点上的合作都非常愉快,因此决定携手走向下一步,并预计最早2015年第四季度实现10 nm FinFET工艺的流片。 Recently, TSMC and ARM jointly announced that they have signed a new multi-year cooperation agreement and will work together on the research and development of the 10 nm FinFET manufacturing process and optimize the ARMv8-A series of processors. The two companies said that the 20 nm SoC and 16 nm FinFET process nodes are both very happy and decided to go hand in hand and anticipate the earliest possible implementation of the 10 nm FinFET process in the fourth quarter of 2015.
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