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采用原子层淀积(ALD)方法,制备了Al_2O_3为栅介质的高性能AlG aN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时,MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时,Schottky-gate HEMT的栅漏电为191μA;在栅压为+20 V时,MOS-HEMT的栅漏电仅为23.6 nA,比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlG aN/GaN MOSHEMT的栅压摆幅达到了±20 V。在栅压Vgs=0 V时,MOS-HEMT的饱和电流密度达到了646 mA/mm,相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10μm的AlG aN/GaN MOSHEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm,特征导通电阻为1.47 mΩ·cm2。Schottky-gate HEMT的开启与关断电流比仅为105,MOS-HEMT的开启与关断电流比超过了109,超出了Schottkygate HEMT器件4个数量级,原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在Vgs=-14 V时,栅漏间距为10μm的AlG aN/GaN MOS-HEMT的关断击穿电压为640 V,关断泄露电流为27μA/mm。
A high-performance AlGaN / GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) with Al 2 O 3 as gate dielectric was prepared by atomic layer deposition (ALD) method. When the gate voltage is -20 V, the gate leakage of MOS-HEMT is more than 4 orders of magnitude lower than the gate leakage of Schottky-gate HEMT. The gate leakage of the Schottky-gate HEMT is 191μA at gate voltage of +2 V; the gate leakage of MOS-HEMT is only 23.6 nA at gate voltage of +20 V, which is higher than the gate leakage of Schottky-gate HEMT of the same size Low nearly seven orders of magnitude. The gate voltage swing of the AlGaN / GaN MOSHEMT reaches ± 20V. At gate voltage Vgs = 0 V, the saturation current density of MOS-HEMT reached 646 mA / mm, a 133% increase over the saturation current density of the Schottky-gate HEMT (277 mA / mm). The maximum saturated output current of AlGaN / GaN MOSHEMT devices with a gate-drain pitch of 10μm at the gate voltage of +3 V reached 680 mA / mm and the characteristic on-resistance was 1.47 mΩ · cm2. Schottky-gate HEMT has a turn-on and turn-off current ratio of only 105 and MOS-HEMT turn-on and turn-off current ratio of more than 109, exceeding the Schottkygate HEMT device by four orders of magnitude due to a reduction in gate leakage that increases MOS-HEMT Turn on and off the current ratio. At Vgs = -14 V, the turn-off breakdown voltage of AlG aN / GaN MOS-HEMT with a gate-to-drain spacing of 10 μm is 640 V with a turn-off leakage current of 27 μA / mm.