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利用微空气桥隔离和自对准技术成功地研制出了自对准结构的AlGaAs/GaAs异质结双极晶体管 .器件展现出良好的直流和高频特性 .对于发射极面积为 2 μm× 15 μm的器件 ,直流电流增益大于 10 ,失调电压 (Offsetvoltage)2 0 0mV ;电流增益截止频率fT 大于 30GHz,最高振荡频率fmax约为 5 0GHz.
AlGaAs / GaAs heterojunction bipolar transistors with self-aligned structure have been successfully fabricated using micro-air bridge isolation and self-alignment techniques. The device exhibits good DC and high frequency characteristics. For an emitter area of 2 μm × 15 μm device, the DC current gain is greater than 10 and the offset voltage is 200mV. The current gain cut-off frequency fT is greater than 30GHz and the maximum oscillation frequency fmax is about 50GHz.