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In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor(MOSFET) are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson's equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.
In this paper the influences of the metal-gate and high-k / SiO 2 / Si stacked structure on the metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated. stacked structure and metal-semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented. A threshold voltage analytical model for metal-gate / high-k / SiO 2 / Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions. The model is verified by a two-dimensional device simulator, which provides the basic design guidance for metal-gate / high-k / SiO 2 / Si stacked MOSFETs.