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采用磁控法制备了CdS薄膜,研究工艺参数对样品沉积质量、沉积速率及晶体结构的影响。实验发现,在不同衬底上制备CdS薄膜时需要采取不同的后续工艺措施以获得较好的沉积质量。同时,制备样品的沉积速率随衬底类型、衬底温度、溅射功率及溅射气压的变化而变化。讨论并给出了工艺参数对上述实验结果的影响机制。X射线衍射谱显示,制备样品是六方和立方两种晶型的混合,沿(002)和(111)晶面择优取向生长。随溅射功率的增大和衬底温度的升高,两种晶型互相竞争生长并分别略微占优势。当溅射功率增大到200 W,衬底温度升高到200℃时,占优势晶型消失,薄膜择优取向特性变得更好。此外,随着溅射气压的增大,样品结晶质量下降,在0.5 Pa时呈现明显非晶化现象。
CdS thin films were prepared by magnetron method to study the effect of process parameters on the deposition quality, deposition rate and crystal structure. The experiment found that the preparation of CdS films on different substrates need to take different follow-up process measures to obtain better deposition quality. At the same time, the deposition rate of the prepared samples varies with substrate type, substrate temperature, sputtering power and sputtering pressure. The mechanism of the influence of process parameters on the above experimental results is discussed and presented. The X-ray diffraction spectrum shows that the prepared sample is a mixture of two hexagonal and cubic forms, with preferred orientation growing along (002) and (111) planes. As the sputtering power increases and the substrate temperature increases, the two crystal forms compete with each other and slightly dominates, respectively. When the sputtering power is increased to 200 W and the substrate temperature is increased to 200 ° C, the dominant crystal disappears and the preferred orientation of the film becomes better. In addition, as the sputtering pressure increases, the crystalline quality of the sample decreases, showing obvious amorphization at 0.5 Pa.