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提出一种新的电压基准结构。利用工作在亚阈值区的MOS管,产生与T2相关的电流进行温度补偿。采用电压预调节结构,改善PSRR。设计了一种低温漂、高PSRR的基于阈值电压的电压基准源。采用SMIC 0.18μm 1P6M工艺对电路进行设计,最小输入电源电压为1.8V,输出基准电压为0.835V。仿真结果表明,在0℃~125℃范围内,温度系数为4.49×10-5/℃,PSRR在低频时为92dB,在1 MHz时为86.7dB,静态电流为11.8μA。
A new voltage reference structure is proposed. Using the MOS transistor operating in the subthreshold region, a current related to T2 is generated for temperature compensation. Pre-adjust the structure with voltage to improve PSRR. A low temperature drift, high PSRR threshold voltage based voltage reference is designed. The circuit is designed using the SMIC 0.18μm 1P6M process with a minimum input supply voltage of 1.8V and an output reference voltage of 0.835V. The simulation results show that the temperature coefficient is 4.49 × 10-5 / ℃ in the range of 0 ℃ ~ 125 ℃, the PSRR is 92dB at low frequency, 86.7dB at 1 MHz and the quiescent current is 11.8μA.