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采用Sol-gel法,以Pt/Ti/SiO_2/Si为衬底在700℃下退火20 min制备了Sb~(3+)摩尔含量分别为0.1、0.2、0.3、0.4、0.5和0.6的Bi_(2-x)Sb_xTi_2O_7薄膜.通过对薄膜进行XRD、SEM和C-V、J-V曲线测试,详细讨论了不同Sb~(3+)含量对Bi2Ti2O7薄膜在结构、表面形貌、电容和漏电流等方面的影响.研究结果表明:Sb~(3+)的掺杂在没有改变Bi_2Ti_2O_7薄膜焦绿石结构的基础上提高了薄膜的稳定性;Sb~(3+)的掺杂提高了薄膜的电容值,尤其是当Sb~(3+)摩尔含量为0.3时,电容峰值达到3.8×10~(-9)F;同时,Sb~(3+)的掺杂显著改善了薄膜的漏电流性能,使薄膜的漏电流密度可以低至1.1×10~(-10)A/cm~2.
The Bi 3+ content of 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6 Sb (3+) were prepared by sol-gel method and annealed at 700 ℃ for 20 min on a Pt / Ti / SiO 2 / 2-x) Sb_xTi_2O_7 thin films.The effect of Sb 3+ content on the structure, surface morphology, capacitance and leakage current of Bi 2 Ti 2 O 7 thin films was discussed in detail by XRD, SEM and CV and JV curves. The results show that the doping of Sb 3+ increases the stability of the film without changing the pyrochlore structure of Bi 2 Ti 2 O 7 film, and the doping of Sb 3+ increases the capacitance of the film, especially when When the content of Sb 3+ is 0.3, the peak value of capacitance reaches 3.8 × 10 -9 F, meanwhile the doping of Sb 3+ greatly improves the leakage current of the thin film, The density can be as low as 1.1 × 10 ~ (-10) A / cm ~ 2.