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AlGaN/GaN异质结及其相关器件因其优越的电学特性成为近几年的研究热点。2DEG作为其特征与材料本身的极化现象关系密切。本文主要从晶体微观结构角度介绍AlGaN/GaN异质结极化现象的产生、机理和方向性,着重讨论极化对异质结界面处诱生的二维电子气的影响。极化不仅可提高2DEG的浓度,而且还能使其迁移率得到提高。
AlGaN / GaN heterojunction and its related devices have become the research focus in recent years because of their superior electrical properties. 2DEG is closely related to the polarization of the material itself. This paper mainly introduces the generation, mechanism and orientation of AlGaN / GaN heterojunction polarization from the viewpoint of crystal microstructure, and focuses on the effect of polarization on the two-dimensional electron gas induced at the interface of heterojunction. Polarization not only increases the concentration of 2DEG, but it also increases its mobility.