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铟柱生长技术在红外焦平面混成器件的工艺中是比较重要的,尤其在制备高密度的混成器件中,就有更高的技术难度. 本文介绍的铟柱生长技术,已能在碲镉汞晶体表面生长出高为50μm～70μm的铟柱,在硅表面长出高为50μm的铟柱,初步满足了现阶段混成焦平面器件的互连工艺要求.
Indium column growth technology in the infrared focal plane hybrid device technology is more important, especially in the preparation of high-density hybrid devices, there is a higher technical difficulty.In this article describes the indium column growth technology, has been in the mercury cadmium telluride An indium column with a height of 50μm ~ 70μm was grown on the surface of the crystal and an indium column with a height of 50μm was grown on the surface of the silicon, which initially met the interconnection process requirements of the hybrid c-plane device.