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使用电子枪对ECR(Electron Cyclotron Resonance)等离子体注入外电子束是继铝衬弧腔、偏压盘之后,对等离子体电子的额外补充的又一种手段,通过向弧腔中注入一定能量与流强的电子束,以期提高引出束流的流强与电荷态。但由于该方法可控参数繁多,经验积累与报道资料都很少,且设计与操作远不如偏压盘等手段简便,故一直未能得到深入研究。通过以三维仿真软件CST粒子工作室对注入到弧腔电子束的运动轨迹的模拟结果为依据、以18 GHz ECR蒸发冷却源为平台,进行了ECR等离子体注入电子束的实验,结果表明:在一定实验条件下,当注入电子束能量超过1 800 e V时,会产生一种引出的离子束流的激增现象。在这个现象中,脉冲与直流的流强均比未注入电子时要高,束流电荷态向高价方向移动,且可通过控制实验条件来控制这种现象。最后对于这种电子并未通过共振面,却能起到提高电荷态与流强的作用进行了分析与讨论,并认为该现象在改善直流束与脉冲束性能的方面都有着积极的意义。
The use of an electron gun to inject the ECR (Electron Cyclotron Resonance) plasma into the outer electron beam is another method for compensating the plasma electrons after the aluminum-lined arc chamber and the bias plate. By injecting certain energy and flow into the arc chamber, Strong electron beam, in order to improve the flow of the outgoing beam flow and charge state. However, due to the large number of controllable parameters, little accumulated experience and reported data, and the fact that the design and operation are far less convenient than the means such as the bias plate, they have not been thoroughly researched. Based on the simulation results of the trajectories of the electron beam injected into the arc cavity by the CST particle studio of the three-dimensional simulation software, an electron-beam ECR plasma injection experiment was carried out using an 18 GHz ECR evaporative cooling source. The results show that at Under certain experimental conditions, when the energy of the injected electron beam exceeds 1 800 eV, a surge phenomenon of the extracted ion beam will occur. In this phenomenon, the pulse and direct current flow rate are higher than when the electron is not injected, and the beam charge state moves to the high price direction, and the phenomenon can be controlled by controlling the experimental conditions. Finally, this electron has not been through the resonance plane, but can play the role of improving the charge state and flow were analyzed and discussed, and that the phenomenon in improving the DC beam and pulsed beam performance has a positive meaning.