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侧墙厚度及悬梁长度是SiGeHBT超自对准器件工艺中的重要结构参数,对器件的寄生效应和结面积有一定的影响,因而也影响器件的电流放大系数β和特征频率ft。在目前的文献中,尚未见到有关SiGeHBT超自对准结构模拟的报道。文章在研究各种超自对准技术的基础上,给出了SiGeHBT超自对准器件的优化结构。利用二维器件模拟软件MEDICI,对该结构中的侧墙及悬梁进行了模拟研究。结果表明,侧墙厚度对器件的频率特性影响较大,而对直流放大倍数β影响较小;悬梁长度在仿真的参数范围内对器件的直流放大特性和特征频率都影响不大。
Sidewall thickness and cantilever beam length are important structural parameters in the SiGeHBT super-aligned device process, and have some influence on the parasitic effect and junction area of the device, thus affecting the current amplification factor β and the characteristic frequency ft of the device. In the current literature, there is no report on the simulation of SiGeHBT super-self-alignment structure. Based on the study of various super-self-alignment techniques, the article gives the optimized structure of SiGeHBT super-self-aligned devices. Using two-dimensional device simulation software MEDICI, the sidewall and cantilever beams in the structure were simulated. The results show that the thickness of the side wall has a great influence on the frequency characteristics of the device, and has little effect on the DC amplification β. The suspension beam length has little effect on the DC amplification characteristics and the characteristic frequency of the device within the simulated parameter range.