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采用等离子体辅助化学气相沉积(PECVD)技术,在Corning Eg 2000玻璃上制备非晶硅薄膜,研究了射频功率对薄膜光电性能的影响。结果表明:通过调节功率可获得具有高折射率,高吸收系数,低暗电导率的非晶硅薄膜。
The amorphous silicon films were prepared on Corning Eg 2000 glass by plasma assisted chemical vapor deposition (PECVD) technique. The influence of RF power on the photoelectric properties of the films was investigated. The results show that an amorphous silicon thin film with high refractive index, high absorption coefficient and low dark conductivity can be obtained by adjusting the power.