提出并研究了改进微波静电感应晶体管(SIT)功率增益的一种很有效的方法。作者发现自中和发生在SIT的共栅结构中,它是由栅接地电感和SIT芯片电极间的杂散电容的谐振引起的,并抵消了所不希望的反馈成份。应用自中和技术获得了高增益SIT,例如:1GHz,10W,增益12dB;2GHz5W,增益9dB;1GHz,80W,增益8dB。 A very effective method to improve the power gain of microwave electrostatic induction transistor (SIT) is proposed and studied. The authors found that self-neutralization occurred in the common gate structure of the SIT due to the resonance of the gate-to-ground inductance and the stray capacitance between the SIT chip electrodes and counteract the undesired feedback components. High-gain SITs are obtained using self-neutralization techniques such as: 1GHz, 10W, gain of 12dB; 2GHz5W, gain of 9dB; 1GHz, 80W, gain of 8dB.