论文部分内容阅读
本文基于LSS理论模型,用Monte Carlo方法模拟了不同种类、不同能量的离子在非晶硅靶中的离子注入过程。计算了射程和能量淀积的空间分布;给出了处理不同材料,多种元素,非均匀浓度和多层结构的靶材料中离子注入过程的转换模型,以及对应的概率判据;确定了散射过程中的最小传递能量;解决了微分散射截面积分发散的问题;介绍了确定最大碰撞参量的估算公式和用于本模型的经验公式。计算结果与LSS理论计算结果符合,为单晶靶的射程计算和用于背散射分析提供了可能。
Based on the LSS theoretical model, the ion implantation process of different kinds and energies of ions in amorphous silicon target was simulated by Monte Carlo method. The spatial distribution of the range and energy deposition was calculated. The model of ion implantation in the target material with different materials, multi-elements, non-uniform concentration and multi-layer structure was given, and the corresponding probability criterion was given. The process of the minimum transfer of energy; to solve the cross-section of the differential scattering scattered problem; introduced to determine the maximum collision parameters of the estimation formula and the empirical formula used in this model. The calculated results are in good agreement with the theoretical calculations of LSS, which makes it possible to calculate the range of single crystal target and analyze the backscatter.