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本文报道了一个在较宽温度范围内能精确描述6HSiCJEFT性能（包括亚阈区）的器件模型，器件的电流电压特性由包含少数几个物理模型参数连续统一的解析表达式表述该模型也包括了串联电阻效应、沟道中电子速度饱和效应、饱和区的有限输出电导、温度决定的模型参数等效应载流子的计算考虑了SiC中杂质能级特点，采用两级电离模型，模拟了典型结构器件的高温特性，结果和实验符合很好
This article reports a device model that accurately characterizes 6HSiCJEFT (including subthreshold regions) over a wide temperature range. The current-voltage characteristics of the device are described by a continuous, uniform set of analytical expressions that include a few physical model parameters. The model also includes The effect of the series resistance, the electron velocity saturation effect in the channel, the limited output conductance in the saturation region, the temperature-dependent model parameters and other equivalent carrier calculations take into account the impurity level characteristics in SiC. The two-stage ionization model is used to simulate the typical structural devices The results are in good agreement with the experiment