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本文分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长方法生长出GaAlAs/GaAs梯度折射率分别限制单量子阱材料 (GRIN—SCH—SQW )。利用该材料制作出的列阵半导体激光器室温连续输出功率达到 1 0W ,峰值波长为 80 6～ 80 9nm
This article analyzes the factors that affect the output power of an array semiconductor laser. GaAlAs / GaAs graded-index-limited single quantum well materials (GRIN-SCH-SQW) were grown by molecular beam epitaxy. The semiconductor laser produced by using the material has a continuous output power at room temperature of 10 W and a peak wavelength of 80 6 to 80 9 nm