多晶硅表面对于电荷耦合器件(CCD)的制作非常重要。采用扫描电子显微镜(SEM)和电学分析技术研究了低压化学气相(LPCVD)法淀积的多晶硅形貌对击穿特性的影响。研究结果表明,减小多晶硅表面颗粒尺寸有助于改善多晶硅氧化层击穿特性。多晶硅氧化层击穿特性与多晶硅和绝缘层交界面的平滑度有关。多晶硅薄膜表面平整度变差,则多晶硅与氧化层之间的界面平滑性变差,多晶硅介质层击穿强度降低。 Polysilicon surfaces are very important for the fabrication of charge coupled devices (CCDs). The effect of polysilicon morphology deposited by low pressure chemical vapor deposition (LPCVD) on the breakdown characteristics was investigated by scanning electron microscopy (SEM) and electrical analysis. The results show that reducing the particle size of polycrystalline silicon helps to improve the breakdown characteristics of polycrystalline silicon oxide. Polysilicon oxide breakdown characteristics and polysilicon and insulation layer interface smoothness. As the surface roughness of the polycrystalline silicon film deteriorates, the interfacial smoothness between the polycrystalline silicon and the oxide layer deteriorates and the breakdown strength of the polycrystalline silicon dielectric layer decreases.