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本文以实验比较了一般功率晶体管和带内建二极管的功率晶体管的EB结的温度特性,分析了并联在EB结上的扩散电阻Rb对测量晶体管△V_(BE)E产生影响的原因.提出了带内建二极管的功率管△v_(BE)测量条件.
In this paper, the temperature characteristics of EB junctions of general power transistors and power transistors with built-in diodes are compared experimentally, and the reason why the diffusion resistance Rb connected in parallel with the EB junction has influence on the measurement transistor △ V BE is presented. Power tube with built-in diode △ v_ (BE) measurement conditions.