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建立了 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了GAT的栅屏蔽效应的解析表达式 ,并借助计算机对栅屏蔽效应给以证实。该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
A two-dimensional analytical model of depletion layer potential distribution and electric field distribution in GAT device was established. The analytical expression of gate shielding effect of GAT was quantitatively studied, and the gate shielding effect was verified by computer. The model is optimized for bipolar high-frequency, high-voltage, low-saturation voltage drop power device reference.