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The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I–V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet(UV) illumination. n-TiO2NW/p-Si has a p–n junction formed in the n-TiO2/p-Si heterojunction. TiO2NW/Si photodiode produces a photocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.
The optoelectronic properties of n-TiO2NW / p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of n-TiO2NW / p-Si has ap-n junction formed in the n-TiO2 / p-Si heterojunction. TiO2NW / Si photodiode produces a photocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A / W responsivity at 4-V reverse bias.