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利用籽晶法制备了大晶粒尺寸的低压 ZnO 变阻器,借助电子微探针和机械微探针分别研究了这种 ZnO陶瓷样品的单晶界元素组成和伏安特性。发现存在3种非线性伏安特性,击穿电压分别为1.8、3.5和6.0V;对应子晶粒表面直接接触的晶界、富锑的晶界和富铋的晶界。偏压下的 ZnO 陶瓷电容测量结果也表明存在3种不同势垒高度的晶界。
The low-voltage ZnO varistors with large grain size were prepared by the seed crystal method. The elemental composition and the volt-ampere characteristics of single crystal grain boundaries of ZnO ceramics were investigated by means of electron microprobe and mechanical microprobe respectively. Three kinds of non-linear volt-ampere characteristics were found, with breakdown voltages of 1.8, 3.5 and 6.0 V, respectively; corresponding to the grain boundaries directly contacted on the surface of the subgrains, the grain boundary rich in antimony and the grain boundary rich in bismuth. Measurement results of ZnO ceramic capacitors at bias also showed that there were three grain boundaries with different barrier heights.