论文部分内容阅读
本文报导了用电子束蒸发的方法,在GaAs衬底上制备Si_3N_4掩蔽膜的实验结果。在250℃～280℃下,用Cr激活的GaAs——Si_3N_4薄膜,附着力显著增大,可掩蔽Zn进行较深的扩散。而且引入的痕量Cr小于1ppm。
In this paper, the experimental results on the preparation of Si_3N_4 masks on GaAs substrates by electron beam evaporation are reported. At 250 ℃ ~ 280 ℃, Cr-activated GaAs - Si_3N_4 thin films significantly increase the adhesion, can mask the deeper diffusion of Zn. The trace Cr introduced is less than 1 ppm.