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A mass of GaN nanowires has been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga 2 O 3 /Co films at 950 C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.
A mass of GaN nanowires has been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / Co films at 950 C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and capable of relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.