Ferroelectric domain walls (DWs) can be repet-itively created, displaced, and deleted, in order to function as active elements for future nano-electronic device
The properties of six kinds of intrinsic point defects in monolayer GeS are systematically investigated using the“transfer to real state”model, based on densi
Pressure evolution of local structure and vibrational dynamics of the perovskite-type relaxor ferroelectric single crystal of 0.935(Na0.5Bi0.5)TiO3-0.065BaTiO3