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利用同步辐射光电子能谱技术研究了Tb/GaAs(10 0 )界面的吸附过程和界面形成。通过对价带谱及高分辨率的Ga,As芯能级谱的研究表明 ,在较低的覆盖度下 (<0 2nm) ,Tb与GaAs衬底的反应很弱 ,形成较突变的金属 /半导体界面。当Tb的覆盖度增加时 ,As 3d和Ga 3d的表面发射峰很快消失 ,Tb与衬底发生反应 ,置换出Ga而与As形成化学键。同时Ga原子会向Tb薄膜内扩散并偏析到表面 ,而Tb As化合物只停留在界面附近区域。当Tb淀积到 0 6nm时 ,Tb膜金属化。
The adsorption process and interfacial formation of Tb / GaAs (100) interface were studied by using synchrotron radiation photoelectron spectroscopy. Studies on the energy spectrum of the Ga and As cores by the valence band spectra and the high resolution show that the reaction between Tb and the GaAs substrate is very weak at lower coverage (<0.2 nm), resulting in the formation of more abrupt metal / semiconductors interface. When the coverage of Tb increases, the surface emission peaks of As 3d and Ga 3d disappear rapidly, Tb reacts with the substrate, displaces Ga and forms a chemical bond with As. At the same time, Ga atoms diffuse into the Tb thin film and segregate to the surface, while the Tb As compound only stays in the vicinity of the interface. When Tb is deposited to 0 6 nm, the Tb film is metallized.