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在室温下,利用直流磁控反应溅射法分别在硅片和石英玻璃上制备IGZO薄膜。通过控制溅射时氧分压的不同,研究其制备IGZO薄膜的微结构、表面形貌及其元素结合能及电学与光学特性。结果表明,在不同的氧分压下,薄膜始终保持稳定的非晶结构,并且在可见光区域的透光率超过80%。随着氧分压的增加,薄膜的表面粗糙度增加,沉积速率下降。通过X射线光电子谱分析随氧分压的增大,氧空位的增加,从而引起薄膜的电阻率增大,光学禁带宽度逐渐由3.58减小到3.50e V。氧分压是磁控溅射IGZO薄膜的关键因素。
IGZO films were prepared on silicon and quartz glass by DC magnetron reactive sputtering at room temperature. By controlling the difference of oxygen partial pressure during sputtering, the microstructure, surface morphology, elemental binding energy and electrical and optical properties of IGZO thin films were investigated. The results show that under different partial pressure of oxygen, the film always has a stable amorphous structure, and the transmittance of light in the visible region is more than 80%. With the increase of oxygen partial pressure, the surface roughness of the film increases and the deposition rate decreases. By X-ray photoelectron spectroscopy analysis with the oxygen partial pressure increases, oxygen vacancies increase, causing the film resistivity increases, the optical band gap gradually decreased from 3.58 to 3.50eV. The partial pressure of oxygen is the key factor of magnetron sputtering IGZO film.