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在制作集成电路时,为了增大P—N结的反向击穿电压和减小晶体管的交叉漏电流,我们利用冠醚清除二氧化硅中的碱金属杂质。一些试验结果对于生产者是有用的。
In fabricating integrated circuits, we used crown ethers to remove alkali metal impurities in silicon dioxide in order to increase the reverse breakdown voltage of the P-N junction and reduce the cross leakage current of the transistor. Some test results are useful for the producer.