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采用外建激光谐振腔,在低于原芯片阈值的电流激励下对LDA的每个发光点进行单独测量,从而分析整个半导体激光阵列(LDA)的smile效应。实验中利用镀膜反射率大于半导体前腔面的外腔镜形成外腔半导体激光器。在外腔中插入曲面平行于p-n结的柱面镜,使只在光轴上的发光点与外腔镜形成外腔激光器,降低该发光点的激光阈值,从而使其在正常的阈值以下的电流激励下输出激光,在平行于p-n结的方向移动柱面镜,可以逐个对半导体激光器中的发光点进行选择测量,从而获得LDA smile效应的测量值。测量中的低电流激励产生的热量对芯片寿命没有影响,对LDA的发光点的单个测量也避免了其他发光点对CCD的影响。
An external laser cavity was used to measure each smile point of the LDA at a current below the threshold of the original chip to analyze the smile effect of the entire semiconductor laser array (LDA). In the experiment, an external cavity semiconductor laser was formed by using an external cavity mirror whose coating reflectivity was greater than that of the semiconductor front cavity. In the external cavity into the curved surface parallel to the pn junction of the cylindrical mirror, so that only the optical axis of the luminescent point with the external mirror to form an external cavity laser, reducing the laser point of the light-emitting point, so that it is below the normal threshold current The output laser is excited and the cylinder mirror is moved parallel to the pn junction, and the measurement of the LDA smile effect can be obtained by selecting the light-emitting points in the semiconductor laser one by one. The heat generated by the low-current excitation in the measurement has no effect on the chip life, and a single measurement of the light-emitting point of the LDA also avoids the influence of other light-emitting points on the CCD.