论文部分内容阅读
本文讨论和估价了几种界面态效应,对于表面沟道电荷耦合器件(CCD’s)性能的限制。在器件的全部工作时间采用了一种本底电荷,可以使界面态效应对转移效率的限制减至最小。为了精确地定量地预计转移失效率,在器件制作成之后,需要测量界面态的俘获截面和密度,我们对三相和二相器件的转移失效率作了实验测量,其测量结果与预计值相一致。结果表明俘获效应对于表面沟道电荷耦合器件的转移效率存在一种限制,例如,特别是对于转移电极长为10μm的器件在低于1MHZ运用时有一种限制,但对于高频性能并不存在直接的限制。此外,还讨论了界面态对于附加于电荷群的转移噪声的影响,虽然在某些器件中为了其它的目的,这种影响可能会减小信噪比,但是它被证明是相当小的。
This article discusses and evaluates several interface-state effects that limit the performance of surface-channel charge-coupled devices (CCD’s). A background charge is used throughout the device’s operation time to minimize the effects of interface state effects on transfer efficiency. In order to accurately predict the transfer failure rate, the capture cross section and density at the interface state need to be measured after fabrication of the device. We have experimentally measured the transfer failure rate of the three-phase and two-phase devices. The measured results are in agreement with the predicted values Consistent. The results show that the trap effect has a limitation on the transfer efficiency of a surface channel charge-coupled device. For example, a device with a transfer electrode length of 10 μm has a limitation for applications below 1MHZ, but does not exist for high-frequency performance limits. In addition, the influence of interface states on the transfer noise attached to the charge population is also discussed, although this effect may reduce the signal-to-noise ratio for other purposes in some devices, but it turns out to be quite small.