论文部分内容阅读
研究了GaAs/AlAs/GaAs三层膜氧化前后成分和微结构的变化。对GaAs/AlAs/GaAs利用横向氧化的方式得到了GaAs/Al2 O3/GaAs薄膜 ,利用X射线小角反射和高角衍射技术进行了微结构表征。结果表明 ,氧化前GaAs/AlAs/GaAs结构中 ,AlAs层与表面GaAs之间存在着一层110 的均匀过渡层。AlAs层分成厚度为 4 0 和 10 5 0 的两层 ,而 4 0 厚的AlAs层的平均原子密度比 10 5 0 厚的减小。利用横向氧化的方式使得AlAs完全氧化为Al2 O3,而且与氧化前相比 ,其过渡层的厚度与粗糙度均减小。
The changes of composition and microstructure of GaAs / AlAs / GaAs three-layer films before and after oxidation were studied. The GaAs / Al 2 O 3 / GaAs films were obtained by lateral oxidation of GaAs / AlAs / GaAs and characterized by X-ray small angle and high angle diffraction. The results show that there exists a uniform transition layer 110 between the AlAs layer and the surface GaAs in the pre-oxidation GaAs / AlAs / GaAs structure. The AlAs layer is divided into two layers with thicknesses of 40 and 105, whereas the average atomic density of the 400 AlAs layer is less than that of 10500. Al 2 O 3 is completely oxidized to Al 2 O 3 by lateral oxidation, and both the thickness and the roughness of the transition layer are reduced as compared with that before oxidation.