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介绍了长波双色AlxGa1-xAs/GaAs多量子阱红外探测器单元的设计、制作和测试。器件光敏面面积为300μm×300μm,光吸收峰值波长分别为10.8、11.6μm;采用垂直入射光耦合的工作模式,65K温度2V偏压下,两个多量子阱区的暗电流分别为4.23×10-6、4.19×10-6A;黑体探测率分别为1.5×109、6.7×109cm.Hz1/2/W;响应率分别为0.063、0.282A/W。GaAs基量子阱红外探测器(QWIP)材料生长和加工工艺成熟、大面积均匀性好、成本低、不同波段之间的光学串音小,使得AlGaAs/GaAsQWIP在制作多色大面阵方面具有明显的优势。
The design, fabrication and testing of a long wave two-color AlxGa1-xAs / GaAs multiple quantum well infrared detector unit are introduced. The device has a photosensitive surface area of 300 μm × 300 μm and peak light absorption wavelengths of 10.8 and 11.6 μm, respectively. Under the operating mode of vertical incident light coupling, the dark current of the two MQW regions is 4.23 × 10 -6, 4.19 × 10-6A, respectively. The detection rates of blackbody were 1.5 × 109 and 6.7 × 109cm.Hz1 / 2 / W, respectively. The response rates were 0.063,0.282A / W, respectively. GaAs-based quantum well infrared detector (QWIP) material growth and processing technology mature, large area uniformity, low cost, low optical crosstalk between different bands, making AlGaAs / GaAsQWIP in the production of multicolor large area array has obvious The advantages.