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报道了一种适于模拟n沟道非晶IGZO薄膜晶体管(a-IGZO TFT)的直流I-V特性的分析模型。该模型充分考虑了深能级类受主态对自由电子的捕获,并将表面势的概念引入a-IGZO TFT结构。在分析器件能带结构和载流子输运的基础上,参考Si基MOSFET中表面势模型的分析方法,利用半导体-绝缘体界面电荷的泊松方程表达,并结合能带-电压关系,导出了器件饱和区和非饱和区的I-V解析表达式。通过Matlab编程模拟了a-IGZOTFT的转移特征曲线和输出特征曲线,对文献中实验数据进行拟合发现,提出的模型与实验数据均能很好地吻合。该模型结构简明,所包含的参数物理意义明确,有很强的实用性。
An analysis model of I-V DC characteristics suitable for simulating a-IGZO TFT with n-channel amorphous structure is reported. This model takes full account of the capture of free electron by the acceptor state of the deep level class and introduces the concept of surface potential into the a-IGZO TFT structure. Based on the analysis of energy band structure and carrier transport, the method of surface potential model in Si-based MOSFET is referred to, and the Poisson equation of interfacial charge of semiconductor-insulator interface is used to express the relationship between energy band and voltage IV resolution of device saturation and non-saturation regions. The transfer characteristic curve and the output characteristic curve of a-IGZOTFT were simulated by Matlab, and fitting the experimental data in the literature found that the proposed model is in good agreement with the experimental data. The structure of the model is concise, the included parameters have clear physical meaning and strong practicability.