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本文对MISS(金属-绝缘层-AlGaAs-GaAs)和MES(金属-AlGaAs-GaAs)结构异质结中二维电子气的栅控特性做了系统的理论分析.由此,给出与器件性质密切相关的平带电压和异质结各参量间的关系.值得指出,为了制造适宜于LSI中应用的增强型PET,应对AlGaAs进行最佳掺杂,而不用通常的均匀掺杂.文中也给出了这一最佳掺杂条件.
This paper systematically analyzes the gate-control characteristics of two-dimensional electron gas in MISS (metal-insulating layer-AlGaAs-GaAs) and MES (metal-AlGaAs-GaAs) Closely related to the relationship between flat-band voltage and heterojunction parameters.It is worth noting that in order to fabricate an enhanced PET suitable for use in LSI, AlGaAs should be optimally doped without the usual uniform doping. Out of this optimal doping conditions.