论文部分内容阅读
采用直流热阴极PCVD方法,以B(OCH3)3作为硼源,通过改变氩气与氢气流量比,在p型Si衬底上沉积了硼掺杂纳米金刚石膜。研究了不同氩气与氢气流量比对掺硼金刚石膜生长的影响。采用扫描电子显微镜、拉曼光谱仪、X射线衍射仪、霍尔系统等对样品的形貌、结构和导电性能进行了表征。结果表明,随着氩气与氢气流量比的增加,膜的晶粒尺寸由微米级向纳米级转变,并且膜中非晶碳成分增多,膜的导电性能变好。
A DC hot cathode PCVD method was used to deposit boron-doped nano-diamond films on a p-type Si substrate by using B (OCH3) 3 as a boron source by changing the flow ratio of argon to hydrogen. The effects of argon / hydrogen flow ratio on the growth of boron doped diamond films were investigated. The morphology, structure and electrical conductivity of the samples were characterized by scanning electron microscopy, Raman spectroscopy, X-ray diffraction, Hall system. The results show that as the flow ratio of argon to hydrogen increases, the grain size of the film changes from micrometer to nanometer, and the amorphous carbon content in the film increases, and the conductivity of the film becomes better.