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本文定量地研究了硅自由表面层熔体的流动规律,用大量实验数据确立了自由表面层熔体径向流动速度与熔体纵横比(D/H)值的线性对应关系。根据这个关系可以成功地解释和处理硅单晶生长过程中的许多相关问题。
This paper quantitatively studied the flow of free surface melt of silicon, and established a linear relationship between the melt radial flow rate and melt aspect ratio (D / H) using a large amount of experimental data. Based on this relationship, many related problems in the growth of silicon single crystals can be successfully explained and dealt with.