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应用二维漂移扩散模型研究具有分立吸收层、渐变层、电荷层和倍增层结构(SAGCM)的InGaAsP蛳InP雪崩光电探测器(APD),仿真分析了不同电荷层、倍增层厚度和掺杂浓度对电场分布、电流响应及击穿电压的影响,特别是参数变量对增益计算模型的影响,载流子传输过程的时间依赖关系和倍增层中所处位置的影响。仿真结果表明:较高掺杂浓度和较薄电荷层结构可以改变器件内部的电场分布,进而提高增益值。当入射光波长为1.55μm,光功率为500 W/m2时,光电流响应量级在10-2 A;阈值电压降低到10 V以下,击穿电压为42.6 V时,器件倍增增益值大于100。
The InGaAsP 蛳 InP avalanche photodetector (APD) with discrete absorption layer, graded layer, charge layer and double layer structure (SAGCM) was studied by using two-dimensional drift diffusion model. The effects of different charge layers, doubler thickness and doping concentration The effect on the electric field distribution, the current response and the breakdown voltage, in particular the effect of the parameter variables on the gain calculation model, the time dependence of the carrier transport and the position in the doubling layer. The simulation results show that the higher doping concentration and thinner charge layer structure can change the electric field distribution inside the device and then increase the gain value. When the wavelength of incident light is 1.55μm and the optical power is 500 W / m2, the photocurrent response is in the order of 10-2 A; when the threshold voltage is reduced to less than 10 V and the breakdown voltage is 42.6 V, the device gain gain is greater than 100 .