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实际纳米MOSFET电流噪声为散粒噪声和热噪声,且散粒噪声受到费米作用和库仑作用的抑制.而现有文献研究实际纳米MOSFET电流噪声时,采取了完全不考虑其散粒噪声的抑制,或者只是强调抑制的存在而并未给出具体的抑制分析.本文基于Navid模型推导了实际纳米MOSFET电流噪声,并考虑费米作用和库仑作用对散粒噪声的抑制.在此基础上,对电流噪声随沟道长度、温度、源漏电压和栅极电压的变化特性进行了分析,其变化规律与文献中已有的实验和理论变化相一致.沟道长度越短,温度越低,源漏电压越大和栅极电压越低,电流噪声主要以散粒噪声为主.
The actual nano-MOSFET current noise is shot noise and thermal noise, and shot noise is suppressed by Fermi and Coulomb effect.While the existing literature to study the actual nano-MOSFET current noise, take the rejection of the shot noise , Or just emphasize the existence of suppression without giving a specific suppression analysis.In this paper, the current noise of nanometer MOSFET is deduced based on the Navid model, and the suppression of shot noise is taken into account by Fermi and Coulomb interactions.On this basis, The variation of current noise with the variation of channel length, temperature, source-drain voltage and gate voltage is consistent with the existing experimental and theoretical changes in the literature.The shorter the channel length, the lower the temperature, the lower the source The greater the drain voltage and the lower the gate voltage, the current noise is dominated by shot noise.