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用网络分析仪测量了1μm栅(Al,Ga)As/GaAs调制掺杂FET(MODFET)的微波特性。计算了等效电路参数,并与等同结构的GaAsMESFET相比较。比之MESFET,MODFET的电流增益和功率增益截止频率均较高(18和38GHz对14和30GHz),电路参数g_(mo),C_(gs)和R_(ds)呈现较陡的夹断效应。由于沟道中势阱展宽,MODFET中C_(gs)呈现栅偏压依赖关系。在发展MODFET电路模拟的计算机模型中将证明此资料是很有价值的。
The microwave characteristics of a 1μm gate (Al, Ga) As / GaAs doped FET (MODFET) were measured with a network analyzer. Equivalent circuit parameters were calculated and compared with GaAsMESFETs of equivalent structure. Compared with the MESFET, the MODFET has higher current gain and power gain cutoff frequencies (18 and 38 GHz for 14 and 30 GHz), and the circuit parameters g_ (mo), C_ (gs) and R_ (ds) exhibit a steeper pinch-off effect. Due to the potential well broadening in the channel, C_ (gs) in the MOSFET exhibits a gate-bias dependence. This data is proving to be valuable in developing computer models that model MODFET circuits.