新型氧离子导体稳定氧化铋 (Dy2 O3) 0 .15-x(WO3) x(Bi2 O3) 0 85样品具有很高的电导率 ,当x=0 .7时 ,样品在 650℃经过 12 0 0h老化仍不发生相变。用中子衍射技术研究其结构 ,发现氧离子在 32f晶位占位数随着x的变化有一极大值 ,这时晶体结构趋向于氧离子由 8c晶位向 32f晶位移动。由于这时的 2 4e 32f键长最短 ,结构极其稳定。 The new oxygen ion conductor stabilized bismuth oxide (Bi2O3) 0 .15-x (WO3) x (Bi2 O3) 085 samples have very high conductivity. When x = 0.7, the samples are annealed at 650 ℃ for 120h Aging does not occur phase change. Using neutron diffraction technique to study its structure, it is found that the occupancy of oxygen ions in 32f crystal has a maximum value with the change of x. At this time, the crystal structure tends to move oxygen ions from 8c crystal to 32f crystal. Due to the shortest bond length of 2 4e 32f at this time, the structure is extremely stable.