【摘 要】
：
Graphene has high light transmittance of 97.7％and ultrafast carrier mobility,which means it has attracted widespread attention in two-dimensional materials.However,the optical absorptivity of single-layer graphene is only 2.3％,and the corresponding photor
【机 构】
：
National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 0300
论文部分内容阅读
Graphene has high light transmittance of 97.7％and ultrafast carrier mobility,which means it has attracted widespread attention in two-dimensional materials.However,the optical absorptivity of single-layer graphene is only 2.3％,and the corresponding photoresponsivity is difficult to produce at normal light irradiation.And the low on-off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices,hindering potential development.The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties,which can mutu-ally modify the defects of both the graphene and material making it then suitable for optoelectronic devices.In this review,the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed.Firstly,we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector,especially photovoltaic,photoconduction and photogating effects.Secondly,the classification of graphene-based heterojunctions in different directions is summarized.Meanwhile,the latest research progress of graphene-transition metal dichalcogenide(TMD)heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced.Finally,the difficulties faced by the existing technologies of graphene-based photodetectors are discussed,and further prospects are proposed.
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